Journal of Electronic Materials logo Springer logo

Publisher: Springer

Related content
Volume 29, Number 9, September 2004

all issues

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy
pp. L19-L23(5)
Authors: Fang, Z-Q.; Look, D.; Lu, C.; MorkoƧ, H.

Reciprocal space mapping of ordered domains in InxGa1−xP
pp. 1063-1066(4)
Authors: Hess, R.; Moore, C.; Forrest, R.; Nielsen, R.; Goorsky, M.

Iron and manganese doped zinc-blende GaN
pp. 1067-1073(7)
Authors: Fong, C.; Gubanov, V.; Boekema, C.

Bulk single crystal growth of silicon-germanium
pp. 1074-1078(5)
Authors: Deitch, Richard; Jones, Stephen; Digges, Thomas

Etch characteristics of GaN and BN materials in chlorine-based plasmas
pp. 1079-1083(5)
Authors: Medelci, N.; Tempez, A.; Starikov, D.; Badi, N.; Berishev, I.; Bensaoula, A.

Development of a low-cycle fatigue life curve for 80In15Pb5Ag
pp. 1084-1089(6)
Authors: Edwards, L.; Nixon, W.; Lakes, R.

Increased lateral oxidation rates of AllnAs on InP using short-period superlattices
pp. 1100-1104(5)
Authors: Hall, E.; Huntington, A.; Naone, R.; Kroemer, H.; Coldren, L.

Effect of aging on the microstructure and shear strength of SnPbAg/Ni-P/Cu and SnAg/Ni-P/Cu solder joints
pp. 1105-1109(5)
Authors: Ahat, Shawkret; Du, Liguang; Sheng, Mei; Luo, Le; Kempe, Wolfgang; Freytag, Juergen

STM probe-assisted site-control of self-organized InAs quantum dots on GaAs surfaces
pp. 1110-1110(1)
Authors: Kohmoto, Shigeru; Nakamura, Hitoshi; Ishikawa, Tomonori; Asakawa, Kiyoshi

all issues

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page