Temperature and Duration Effects on Microstructure Evolution during Copper Wafer Bonding
Authors: Chen, K.N.; Fan, A.; Tan, C.S.; Reif, R.
Source: Journal of Electronic Materials, Volume 32, Number 12, 1 December 2003 , pp. 1371-1374(4)
Abstract:Interfacial morphologies during Cu wafer bonding at bonding temperatures of 300–400°C for 30 min followed by an optional 30-min or 60-min nitrogen anneal were investigated by means of transmission electron microscopy (TEM). Results showed that increased bonding temperature or increased annealing duration improved the bonding quality. Wafers bonded at 400°C for 30 min followed by nitrogen annealing at 400°C for 30 min, and wafers bonded at 350°C for 30 min followed by nitrogen annealing at 350°C for 60 min achieve the same excellent bonding quality.
Document Type: Research Article
Publication date: December 1, 2003