The Effect of Pd and Cu in the Intermetallic Growth of Alloy Au Wire

Authors: Chang, Hen-So; Hsieh, Ker-Chang; Martens, Theo; Yang, Albert

Source: Journal of Electronic Materials, Volume 32, Number 11, 1 November 2003 , pp. 1182-1187(6)

Publisher: Springer

Buy & download fulltext article:


Price: $47.00 plus tax (Refund Policy)


This is the new wire evaluation work for the reliability of the wire-bonding process. There is a trend for the plastic integrated-circuit package to function at higher junction temperature with thinner wire. New alloy Au wires have been developed to meet the reliability requirements. Two types of alloy Au wires, Au-Pd and Au-Cu, were evaluated in this study. These samples were aged between 155°C and 205°C under air from 0 h to 3,000 h. According to this study, the phase-formation sequence of Au2Al, Au5Al2, and Au4Al intermetallic is similar to the pure Au wire. There is a Pd-rich layer working as a diffusion barrier to slow down the growth rate of intermetallic phases in the Au-Pd wire. The Au-Cu wire also slowed down the growth rate with a different mechanism. Both wires have better reliability based on the microstructure examination. The reliability test results show longer working life at higher temperatures in comparison with the regular Au wire.


Document Type: Research Article

Publication date: November 1, 2003

Related content


Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page