High-Resolution Transmission Electron Microscopy of Silicide Formation and Morphology Development of Ni/Si and Ni/Si1-xGex
Authors: Chen, X.; Shi, Z.; Banerjee, S. K.; Zhou, J. P.; Rabenberg, L. K.
Source: Journal of Electronic Materials, Volume 32, Number 11, 1 November 2003 , pp. 1171-1181(11)
Abstract:Nickel-silicide phase formation in the Ni/Si and Ni/Si1–xGex (x = 0.20) systems and its correlation with variations in sheet resistance have been studied using high-resolution transmission electron microscopy (HRTEM) and related techniques. Following a 500°C anneal, uniform and low-resistivity NiSi and NiSi1–xGex (x < 0.20) crystalline films were formed in the respective systems. Annealed at 900°C, NiSi2, in the form of pyramidal or trapezoidal islands, is found to replace the NiSi in the Ni/Si system. After a 700°C anneal, threading dislocations were observed for the first time in the Ni/Si1–xGex system to serve as heterogeneous nucleation sites for rapid lateral NiSi1–xGex growth.
Document Type: Research Article
Publication date: 2003-11-01