Influence of H2- and N2-Ambient Annealing of Indium-Tin Oxide Film on Plastic Substrate for Organic Light-Emitting Diode

Authors: Huang, C.J.; Shih, W.C.

Source: Journal of Electronic Materials, Volume 32, Number 10, 1 October 2003 , pp. ix-xiii(5)

Publisher: Springer

Buy & download fulltext article:

OR

Price: $47.00 plus tax (Refund Policy)

Abstract:

Indium tin oxide (ITO) film was deposited on an ARTON plastic substrate using 80 W, direct current (DC) magnetron sputtering on an unheated substrate, then annealed at 150°C under either hydrogen or nitrogen gas for periods ranging from 2 h to 8 h. Film surface morphology, crystal size, crystal orientation, and visible region optical transparency were studied. The grain size was found to increase with increased annealing time. Grain size was larger under nitrogen ambience than under hydrogen ambience. Sheet resistance of as-deposited ITO films was 87Ω/sq, but with nitrogen ambient annealing at 150°C for 8 h, it declined to 65Ω/sq. Average ITO-film transmittance was 88% after an 8-h nitrogen-ambient annealing.

Keywords: DIODE OLED; INDIUM TIN OXIDE ITO; ORGANIC LIGHT-EMITTING; SHEET RESISTANCE; TRANSMITTANCE

Document Type: Letter Section

Publication date: October 1, 2003

Related content

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page