Self-Limiting Growth of ZrO2 Films on a Si(100) Substrate Using ZrCl4 and O2 Under Atmospheric Pressure
Authors: Takahashi, Naoyuki; Yoshii, Naoki; Nonobe, Shinichi; Nakamura, Takato; Yoshioka, Masayuki
Source: Journal of Electronic Materials, Volume 32, Number 10, 1 October 2003 , pp. 1107-1110(4)
Abstract:The ZrO2 films were deposited onto a Si(100) substrate using an alternate reaction of ZrCl4 and O2 under atmospheric pressure. It is found that the growth rate of ZrO2 film depends on the growth conditions, such as growth temperature, partial pressure of the sources being supplied, and exposure time of the substrate to the gaseous sources. Self-limiting growth of the ZrO2 was achieved in the range of the growth temperature of 673–923 K. The x-ray diffractogram of the ZrO2 films showed a typical diffraction pattern assigned to the tetragonal polycrystalline phase. The obtained ZrO2 films were of smooth and uniform surface. It was found that the [O]/[Zr] ratio of the ZrO2 films are similar to that of the ZrO2 bulk.
Document Type: Miscellaneous
Publication date: October 1, 2003