Indium-Tin Oxide/Si Contacts with In- and Sn-Diffusion Barriers in Polycrystalline Si Thin-Film Transistor Liquid-Crystal Displays

Authors: Ryu, Hojin; Kang, Jinmo; Han, Younggun; Kim, Donghwan; Pak, James Jungho; Park, Won-Kyu; Yang, Myoung-Su

Source: Journal of Electronic Materials, Volume 32, Number 9, 1 September 2003 , pp. 919-924(6)

Publisher: Springer

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Abstract:

Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10-3-4 × 10-3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10-5-4 × 10-4 Ωcm2) but lower than the values obtained from ITO/Si contacts (about 1 × 10-2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.

Keywords: CONTACT RESISTANCE; DIFFUSION BARRIER; IN; ITO; POLY-SI; SN; TFT-LCD

Document Type: Regular Paper

Publication date: September 1, 2003

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