Layer-Transfer Process for Silicon-on-Insulator with Improved Manufacturability

Author: Usenko, Alexander

Source: Journal of Electronic Materials, Volume 32, Number 8, 1 August 2003 , pp. 872-876(5)

Publisher: Springer

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Abstract:

We observe hydrogen platelet buildup in single-crystalline silicon caused by hydrogen-plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried-defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena and discuss applicability of the plasma hydrogenation to silicon-on-insulator (SOI) wafer fabrication by layer transfer.

Keywords: SOI; hydrogen; implantation; plasma; platelets; silicon

Document Type: Research Article

Publication date: August 1, 2003

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