High Resistivity Measurement of SiC Wafers Using Different Techniques
Authors: Muzykov, P.G.; Khlebnikov, Y.I.; Regula, S.V.; Gao, Y.; Sudarshan, T.S.
Source: Journal of Electronic Materials, Volume 32, Number 6, 1 June 2003 , pp. 505-510(6)
Abstract:To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely,the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.
Document Type: Miscellaneous
Publication date: 1 June 2003