InGaN/GaN LEDs with a Si-Doped InGaN/GaN Short-Period Superlattice Tunneling Contact Layer
Authors: Wu, L.W.; Chang, S.J.; Su1, Y.K.; Tsai, T.Y.; Wen, T.C.; Kuo, C.H.; Lai, W.C.; Sheu, J.K.; Tsai, J.M.; Chen, S.C.; Huang, B.R.
Source: Journal of Electronic Materials, Volume 32, Number 5, 1 May 2003 , pp. 411-414(4)
Abstract:Nitride-based light-emitting diodes (LEDs) with Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.
Document Type: Research Article
Publication date: May 1, 2003