AlGaN/GaN Metal-Oxide Semiconductor Heterostructure Field-Effect Transistor with Photo–Chemical-Vapor Deposition SiO2 Gate Oxide

Authors: Wang, C.K.; Chiou, Y.Z.; Chang, S.J.; Su, Y.K.; Huang, B.R.; Lin, T.K.; Chen, S.C.

Source: Journal of Electronic Materials, Volume 32, Number 5, 1 May 2003 , pp. 407-410(4)

Publisher: Springer

Buy & download fulltext article:


Price: $47.00 plus tax (Refund Policy)


High-quality SiO2 was successfully deposited onto GaN by photo–chemicalvapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-m gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.


Document Type: Research Article

Publication date: May 1, 2003

Related content


Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page