AlGaN/GaN Metal-Oxide Semiconductor Heterostructure Field-Effect Transistor with Photo–Chemical-Vapor Deposition SiO2 Gate Oxide

Authors: Wang, C.K.; Chiou, Y.Z.; Chang, S.J.; Su, Y.K.; Huang, B.R.; Lin, T.K.; Chen, S.C.

Source: Journal of Electronic Materials, Volume 32, Number 5, 1 May 2003 , pp. 407-410(4)

Publisher: Springer

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Abstract:

High-quality SiO2 was successfully deposited onto GaN by photo–chemicalvapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-m gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

Keywords: FET; GAN; METAL-OXIDE-SEMICONDUCTOR; PHOTO-CVD; SIO2

Document Type: Research Article

Publication date: May 1, 2003

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