InGaN/GaN Light-Emitting Diodes with a Reflector at the Backside of Sapphire Substrates

Authors: Hsu, Y.P.; Chang, S.J.; Su, Y.K.; Chang, C.S.; Shei, S.C.; Lin, Y.C.; Kuo, C.H.; Wu, L.W.; Chen, S.C.

Source: Journal of Electronic Materials, Volume 32, Number 5, 1 May 2003 , pp. 403-406(4)

Publisher: Springer

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Abstract:

Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO₂/TiO₂ distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

Keywords: DBR; METAL REFLECTOR; LED; INGAN/GAN

Document Type: Research article

Publication date: 2003-05-01