The Cu/n-GaAs Schottky Barrier Diodes Prepared by Anodization Process

Authors: Biber, Mehmet; Türüt, Abdulmecit

Source: Journal of Electronic Materials, Volume 31, Number 12, 1 December 2002 , pp. 1362-1368(7)

Publisher: Springer

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Abstract:

The metal-insulating semiconductor (MIS) Cu/n-GaAs diodes with thin anodic-insulating layer, which is formed by anodic oxidization on the n-GaAs substrate in aqueous 4C₂H₆O₂ 2H₂O 0.1H₃PO₄ electrolyte with pH = 2.02; anodically untreated control Cu/n-GaAs diodes; and anodically treated Cu/nGaAs diodes (several steps of anodization in the same electrolyte followed by a dip in diluted aqueous HCl solution and a subsequent rinse in deionized water) have been prepared. The anodization has increased the barrier heights as well as the ideality factors. We have obtained barrier heights of approximately 0.68 eV, 0.90 eV, and 0.92 eV for the control sample, anodically treated sample, and MIS sample, respectively, adding the contribution caused by image-force effect only.Thus, the barrier height has been increased by at least 140 meV. Furthermore, we have calculated a mean tunneling-barrier height of x 0.025 eV for the MIS Cu/n-GaAs Schottky barrier diode (SBD).

Keywords: SCHOTTKY BARRIER HEIGHT; SCHOTTKY CONTACTS; METAL-SEMICONDUCTOR; CONTACT; ANODIC OXIDATION

Document Type: Miscellaneous

Publication date: 2002-12-01