Anisotropic and Selective Grain Growth during Ohmic Contact Formation

Authors: Xie, Qianghua; Fejes, Peter; Le, Ha; Lan, Ellen

Source: Journal of Electronic Materials, Volume 31, Number 12, 1 December 2002 , pp. 1357-1361(5)

Publisher: Springer

Buy & download fulltext article:

OR

Price: $47.00 plus tax (Refund Policy)

Abstract:

We examine the grain formation during annealing of metallic contacts on multiple semiconductor layers by transmission electron microscopy (TEM). The system investigated is Ni/Ge/Au on GaAs/InGaP/InGa(Al)As. Heterointerfaces set vertical limits for the growth of various grains leading to an evident anisotropic lateral-grain expansion. The Au-containing grains selectively locate in the proximity of the InGaAs layer. Using nanoprobe x-ray energy-dispersive spectrum (EDS) analysis, the compositions of those different types of grain have been determined. The microstructure of the grains correlates with the contact resistance and on-resistance of the devices.

Keywords: ANNEALING; GRAIN GROWTH; METALLIC CONTACTS; NI GE AU; TEM

Document Type: Miscellaneous

Publication date: December 1, 2002

Related content

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page