Flux-Free Direct Chip Attachment of Solder-Bump Flip Chip by Ar + H2 Plasma Treatment

Authors: Hong, Soon-Min; Kang, Choon-Sik; Jung, Jae-Pil

Source: Journal of Electronic Materials, Volume 31, Number 10, 1 October 2002 , pp. 1104-1111(8)

Publisher: Springer

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Abstract:

The flux-free flip-chip bonding process using plasma treatment was investigated. The effect of plasma-process parameters on Sn oxide-etching characteristics was evaluated by Auger depth-profile analysis. The die-shear test was performed to evaluate the adhesion strength of an Sn-37mass%Pb and Sn3.5mass%Ag solder-bump flip chip that was bonded after plasma treatment. The Ar + H2 plasma treatment reduced the thickness of the oxide layer on the Sn surface. The addition of H2 to the Ar plasma improved the oxide-etching characteristics. A low chamber pressure was more effective in oxide etching. The die-shear strength of the plasma-treated Sn-Pb and Sn-Ag solder flip chip was higher than that of the nontreated chip but lower than that of the fluxed chip. The difference in the die-shear strength between the plasma-treated specimen and the nontreated specimen increased with increasing bonding temperature. The plasma-treated flip chip fractured at the solder/top-surface metallurgy (TSM) interface at low bonding temperature, but at the solder/ under-bump metallurgy (UBM) interface at high bonding temperature.

Keywords: BUMP; DIE-SHEAR; FLIP CHIP; FLUX-FREE; FRACTURE SURFACE; OXIDE LAYER; PB-FREE SOLDER; PLASMA; STRENGTH

Document Type: Miscellaneous

Publication date: October 1, 2002

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