Characterization and Optimization of Copper Chemical Mechanical Planarization

Authors: Laursen, Thomas; Grief, Malcolm

Source: Journal of Electronic Materials, Volume 31, Number 10, 1 October 2002 , pp. 1059-1065(7)

Publisher: Springer

Buy & download fulltext article:

OR

Price: $47.00 plus tax (Refund Policy)

Abstract:

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry,while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-m technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-m technology node.

Keywords: CHEMICAL MECHANICAL POLISHING CMP; COPPER INTERCONNECTS; DUAL DAMASCENE; EROSION; SLURRY

Document Type: Research Article

Publication date: October 1, 2002

Related content

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page