Pad Effects on Material-Removal Rate in Chemical-Mechanical Planarization
Authors: Bastawros, Ashraf; Chandra, Abhijit; Guo, Yongjin; Yan, Bo
Source: Journal of Electronic Materials, Volume 31, Number 10, 1 October 2002 , pp. 1022-1031(10)
Abstract:The role of a porous pad in controlling material-removal rate (MRR) during the chemical-mechanical planarization (CMP) process has been studied numerically. The numerical results are used to develop a phenomenological model that correlates the forces on each individual abrasive particle to the applied nominal pressure. The model provides a physical explanation for the experimentally observed domains of pressure-dependent MRR, where the pad deformation controls the load sharing between active-abrasive particles and direct pad-wafer contact. The predicted correlations between MRR and slurry characteristics, i.e., particle size and concentration, are in agreement with experimentally measured trends reported by Ouma and Izumitani.
Document Type: Research article
Publication date: 2002-10-01