Transient-Enhanced Diffusion in Shallow-Junction Formation
Authors: Fiory, A.T.; Chawda, S.G.; Madishetty, S.; Mehta, V.R.; Ravindra, N.M.; McCoy, S.P.; Lefrançois, M.E.; Bourdelle, K.K.; McKinley, J.M.; Gossmann, H.-J.L.; Agarwal, A.
Source: Journal of Electronic Materials, Volume 31, Number 10, 1 October 2002 , pp. 999-1003(5)
Abstract:Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.
Document Type: Research Article
Publication date: October 1, 2002