Heavy Cr doping of ZnSe by molecular beam epitaxy
Authors: Vanmil, B.; Ptak, A.; Bai, L.; Wang, Lijun; Chirila, M.; Giles, N.; Myers, T.; Wang, Larry
Source: Journal of Electronic Materials, Volume 31, Number 7, July 2002 , pp. 770-775(6)
Abstract:Epitaxial ZnSe layers were grown by molecular beam epitaxy (MBE) to study Cr incorporation with the long-term goal of demonstrating an alternate route for achieving transition-metal-doped lasers. Concentrations between 1015 atoms cm−3 and 4×1020 atoms cm−3 were achieved. Secondary ion-mass spectroscopy (SIMS) concentration profiles strongly suggest that surface segregation and accumulation of Cr occurs during growth. Photoluminescence (PL) measurements indicate Cr is incorporated in the optically active Cr2+ state up to levels of ∼1019 cm−3. Electron paramagnetic resonance (EPR) studies suggest that the Cr atoms exhibit collective magnetic behavior even at these levels. X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) indicate high structural quality is maintained for Cr incorporation for levels up to ∼1019 atoms cm−3.
Document Type: Research Article
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Publication date: 2002-07-01