Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices

Authors: Jóźwikowski, K.; Rogalski, A.; Jóźwikowska, A.

Source: Journal of Electronic Materials, Volume 31, Number 7, July 2002 , pp. 677-682(6)

Publisher: Springer

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The aim of this paper is to present an effective numerical model of fluctuation phenomena in semiconductor structures with an arbitrarily defined doping profile and variable-band structure. The model enables the spectral intensity of the noise current to be calculated. It is known that the 1/f noise may result in fluctuations of the carrier mobility. It is not clear, however, why strong 1/f noise is observed in reverse-biased HgCdTe nonequilibrium photodiodes when saturation currents are usually very low. In the present paper, we try to answer this question. Although the nonequilibrium mode of operation leads to the reduction of the generation-recombination (g-r) noise, it increases the electric field as well as the band mobility of carriers and its fluctuations. The observed low-frequency noise is due to the fluctuations of current density caused by mobility fluctuations assisted by the electric field.

Keywords: 1/f noise; HgCdTe heterostructure devices; numerical modeling

Document Type: Research Article


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Publication date: July 1, 2002

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