A Comparison of Graphite and AlN Caps Used for Annealing Ion-Implanted SiC
Authors: Jones, K.A.; Derenge, M.A.; Shah, P.B.; Zheleva, T.S.; Ervin, M.H.; Kirchner, K.W.; Wood, M.C.; Thomas, C.; Spencer, M.G.; Holland, O.W.; Vispute, R.D.
Source: Journal of Electronic Materials, Volume 31, Number 6, 1 June 2002 , pp. 568-575(8)
Abstract:The SiC wafers implanted with Al were capped with AlN, C, or AlN and C and were annealed at temperatures as high as 1700°C to examine their ability to act as annealing caps. As shown previously, the AlN film was effective up to 1600°C, as it protected the SiC surface, did not react with it, and could be removed selectively by a KOH etch. However, it evaporated too rapidly at the higher temperatures. Although the C did not evaporate, it was not a more effective cap because it did not prevent the out-diffusion of Si and crystallized at 1700°C. The crystalline film had to be ion milled off, as it could not be removed in a plasma asher, as the C films annealed at the lower temperatures were. A combined AlN/C cap also was not an effective cap for the 1700°C anneal as the N or Al vapor blew holes in it, and the SiC surface was rougher after the dual cap was removed than it was after annealing at the lower temperatures.
Document Type: Book review
Publication date: 2002-06-01