Magnetic Effects of Direct Ion Implantation of Mn and Fe into p-GaN

Authors: Lee, K. P.; Pearton, S. J.; Overberg, M. E.; Abernathy, C. R.; Wilson, R. G.; Chu, S. N. G.; Theodoropolou, N.; Hebard, A. F.; Zavada, J. M.

Source: Journal of Electronic Materials, Volume 31, Number 5, 1 May 2002 , pp. 411-415(5)

Publisher: Springer

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Abstract:

In p-GaN implanted with Mn (3 × 1016 cm-2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1-xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.

Keywords: DILUTE MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; GAN; ION IMPLANTATION

Document Type: Research Article

Publication date: May 1, 2002

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