GaN and AlGaN High-Voltage Rectifiers Grown by Metal-Organic Chemical-Vapor Deposition

Authors: Zhu, Ting Gang; Chowdhury, Uttiya; Wong, Michael M.; Denyszyn, Jonathan C.; Dupuis, Russell D.

Source: Journal of Electronic Materials, Volume 31, Number 5, 1 May 2002 , pp. 406-410(5)

Publisher: Springer

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Abstract:

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin "i" region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ~230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.

Keywords: GAN; ALGAN; P-I-N RECTIFIER; SCHOTTKY-BARRIER RECTIFIER; METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION; P-N JUNCTION; IDEALITY FACTOR; SCHOTTKY-BARRIER HEIGHT; ION IMPLANTATION

Document Type: Research article

Publication date: 2002-05-01