Surface Morphology of 6H-SiC after Thermal Diffusion
Authors: Gao, Ying; Soloviev, S. I.; Sudarshan, T. S.
Source: Journal of Electronic Materials, Volume 31, Number 5, 1 May 2002 , pp. 376-379(4)
Abstract:Diffusion of aluminum into 6H-SiC has been carried out in the temperature range of 1800–2100°C. Aluminum carbide (Al4C3) was used for a p-type impurity source; the diffused surface exhibited good stoichiometry and surface morphology. A thin-layer graphite film was developed to protect the wafer surface from deterioration during the high-temperature diffusion process. A high-resolution optical microscope (HROM) and atomic force microscopy (AFM) were employed to evaluate the surface morphology of the diffused samples. The protective graphite layer significantly decreased the surface roughness. X-ray photoelectron spectroscopy (XPS) was used to identify the Si/C ratio near the surface regions. Very little surface graphitization occurred during diffusion. In addition, secondary ion-mass spectroscopy (SIMS) was used to investigate the influence of the thin graphite film on the diffusion properties in SiC. There were no significant differences in doping profiles in the samples with and without the graphite film.
Document Type: Research Article
Publication date: 2002-05-01