Electrical and Growth Characteristics of Au/Al0.15Ga0.85N:Si Structures with Various Si Incorporations
Author: Lee, Cheul-Ro
Source: Journal of Electronic Materials, Volume 31, Number 4, 1 April 2002 , pp. 327-331(5)
Abstract:We have investigated the growth characteristics of n-Al0.15Ga0.85N:Si/GaN and the electronic properties of Au/n-Al0.15Ga0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al0.15Ga0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al0.15Ga0.85N epilayer, which was grown without any intentional flow of SiH4. However, many cracks are observed in the n-Al0.15Ga0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al0.15Ga0.85N:Si diodes having low incorporation of Si showed relatively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al0.15Ga0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/nAl0.15Ga0.85N:Si barrier when Si incorporation becomes higher.
Document Type: Miscellaneous
Publication date: April 1, 2002