Effect of Oxidation on the Thermoelectric Properties of PbSe Thin Films
Authors: Rogacheva1, E.I.; Tavrina, T.V.; Grigorov, S.N.; Nashchekina1, O.N.; Volobuev, V.V.; Fedorov, A.G.; Nasedkin, K.A.; Dresselhaus, M.S.
Source: Journal of Electronic Materials, Volume 31, Number 4, 1 April 2002 , pp. 298-303(6)
Abstract:The effect of oxidation at room temperature on the thermoelectric properties of PbSe/KCl (001) thin films prepared by thermal evaporation was investigated. The dependences of the electrical conductivity, the Hall coefficient, charge carrier mobility, and thermopower on the PbSe layer thickness (d = 4–200 nm) were obtained. An inversion of the sign of the dominant carriers from n to p at d ~ 80 nm was observed under decreasing d. The d dependences of the thermoelectric properties were interpreted, taking into consideration the oxidation processes at the film/air interface within the framework of models considering both n-type and p-type carriers.
Document Type: Miscellaneous
Publication date: April 1, 2002