The Characteristics of Zn-Doped InP Using Spin-on Dopant as a Diffusion Source

Authors: Yoon, K.H.; Lee, Y.H.; Yeo, D.H.; Kim, S.J.

Source: Journal of Electronic Materials, Volume 31, Number 4, 1 April 2002 , pp. 244-247(4)

Publisher: Springer

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Abstract:

Zn diffusion into InP was carried out ex-situ using a spin-on dopant as a diffusion source. The characteristics of Zn-doped InP are analyzed using low-temperature photoluminescence (PL), differential Hall measurement, and secondary ion mass spectrometry (SIMS). Dopant activation of Zn is close to 100% using this method. Band-to-acceptor (B-A) transition peak is dominant in PL, which is a characteristic usually found in in-situ doping. This evidence along with an activation energy of 0.5 eV show that the diffusion is substitutional rather than interstitial.

Keywords: ZN DOPING; INDIUM PHOSPHIDE INP; PHOTOLUMINESCENCE; ACTIVATION; ENERGY

Document Type: Miscellaneous

Publication date: 2002-04-01