Laser doping of silicon carbide substrates

Authors: Salama, I.; Quick, N.; Kar, A.

Source: Journal of Electronic Materials, Volume 31, Number 3, March 2002 , pp. 200-208(9)

Publisher: Springer

Buy & download fulltext article:

OR

Price: $47.00 plus tax (Refund Policy)

Abstract:

A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.

Keywords: Laser doping; direct-write; semiconductor; silicon carbide; wide bandgap

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-002-0207-3

Affiliations: Email: akar@mail.ucf.edu

Publication date: March 1, 2002

Related content

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page