Laser doping of silicon carbide substrates

Authors: Salama, I.; Quick, N.; Kar, A.

Source: Journal of Electronic Materials, Volume 31, Number 3, March 2002 , pp. 200-208(9)

Publisher: Springer

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A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.

Keywords: Laser doping; direct-write; semiconductor; silicon carbide; wide bandgap

Document Type: Research Article


Affiliations: Email:

Publication date: March 1, 2002

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