InP-Based AlInAs/GaAs_0.51Sb_0.49/GaInAs Single Heterojunction Bipolar Transistor for High-Speed and RF Wireless Applications

Authors: Yi, Changhyun; Kim, Tong-Ho; Brown, April S.

Source: Journal of Electronic Materials, Volume 31, Number 2, 1 February 2002 , pp. 95-98(4)

Publisher: Springer

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Abstract:

The InP-based AlInAs-GaAsSb-GaInAs heterojunction bipolar transistors (HBTs) have been grown by solid-source molecular-beam epitaxy (SSMBE). Since the AlInAs-GaAsSb heterojunction has a type-II (staggered) band lineup, the conduction-band discontinuity is negligible at 300 K (10 meV). Thus, the turn-on voltage is significantly lower than that of an AlInAs-GaInAs HBT even without compositional grading of the emitter-base junction. A selfaligned process was used to fabricate large area devices. The measured turnon voltage and collector-emitter offset were 0.36 V and 0.23 V, respectively, with a DC current gain of approximately 25 and ideality factors of η_C = 1.01 and η_B = 1.1 at J_C = 10 kA/cm² collector-current density.

Keywords: GAASSB; GAASSB-BASE; HBT; ALINAS; SSMBE; STAGGERED BAND; LINEUP

Document Type: Miscellaneous

Publication date: 2002-02-01