Effects of Growth and Postgrowth Parameters on the Microstructure and Copper Distribution in Al(Cu)/SiO2 Thin Films
Authors: Hozhabri, N.; Watson, K.M.; Sharma, S.C.; Chaurasia, A.R.
Source: Journal of Electronic Materials, Volume 31, Number 1, 1 January 2002 , pp. 100-103(4)
Abstract:Rutherford backscattering spectroscopy (RBS), x-ray diffraction (XRD), and transmission electron microscopy (TEM) have been employed to study sputter-deposited Al(Cu)/SiO2 films with as low as 0.2 at.% concentration of copper at the wafer target. It is shown that (1) copper concentration is not uniform throughout the film and (2) copper is depleted near the Al/SiO2 interface. The nonuniformity of copper at the interface has been discussed in terms of grain boundaries, their dynamics under film-growth conditions, and the nonuniformity's consequences in microelectronic device fabrications.
Document Type: Letter section
Publication date: 2002-01-01