Effects of Growth and Postgrowth Parameters on the Microstructure and Copper Distribution in Al(Cu)/SiO₂ Thin Films

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In this Subject: <a title="Materials & Manufacturing" href="/content/subcat;jsessionid=4h98voandl3pw.alice?j_subject=190&j_availability=">Materials & Manufacturing
By this author: <a href="/search;jsessionid=4h98voandl3pw.alice?option2=author&value2=Hozhabri++N">Hozhabri, N. ;&nbsp; Watson, K.M. ;&nbsp; Sharma, S.C. ;&nbsp; <a href="/search;jsessionid=4h98voandl3pw.alice?option2=author&value2=Chaurasia++AR">Chaurasia, A.R.

Authors: Hozhabri, N.; Watson, K.M.; Sharma, S.C.; Chaurasia, A.R.

Source: Journal of Electronic Materials, Volume 31, Number 1, 1 January 2002 , pp. 100-103(4)

Publisher: Springer

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Abstract:

Rutherford backscattering spectroscopy (RBS), x-ray diffraction (XRD), and transmission electron microscopy (TEM) have been employed to study sputter-deposited Al(Cu)/SiO₂ films with as low as 0.2 at.% concentration of copper at the wafer target. It is shown that (1) copper concentration is not uniform throughout the film and (2) copper is depleted near the Al/SiO₂ interface. The nonuniformity of copper at the interface has been discussed in terms of grain boundaries, their dynamics under film-growth conditions, and the nonuniformity's consequences in microelectronic device fabrications.

Document Type: Letter section

Publication date: 2002-01-01