Ultraviolet-Visible Metal-Semiconductor-Metal Photodetectors Fabricated from InxGa1-xN (0 ≤ x ≤ 0.13)
Authors: Roberts, J.C.; Parker, C.A.; Muth, J.F.; Leboeuf, S.F.; Aumer, M.E.; Bedair, S.M.; Reed, M.J.
Source: Journal of Electronic Materials, Volume 31, Number 1, 1 January 2002 , pp. 94-99(6)
Abstract:Metal-semiconductor-metal (MSM) photodetectors have been fabricated on InxGa1-xN epitaxial films grown by metalorganic chemical vapor deposition within the composition range 0 ≤ x ≤ 0.13. The dark current and spectral response were measured for devices with a varying In mole fraction x. The devices, which had nominal finger widths and finger spacing of 5 μm, were biased with modest voltages in the range 2 ≤ Vbias ≤ 5 V. In general, turn-on wavelength and dark current increased with increasing x. Turn-on wavelengths ranged from λ = 370 nm to 430 nm and dark current densities ranged from Idark = 2 × 10-2 A/cm2 (Vbias = 5 V, x ≈ 0.05) to 9 × 104 A/cm2 (Vbias = 2 V, x ≈ 0.13) depending on the In content, x, of the device active area.
Document Type: Letter section
Publication date: 2002-01-01