Curing of Polyimide and the Effect of the TEOS SiO₂ Barrier Layer on the Electromigration of Sputtered Cu with Polyimide Passivation

Authors: Hung, Hanyi; Chiou, Bi-Shiou

Source: Journal of Electronic Materials, Volume 31, Number 1, 1 January 2002 , pp. 82-87(6)

Publisher: Springer

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Abstract:

The curing process of polyimide and the electromigration of copper films with polyimide (PI) passivation are studied. Thermal analysis of polyimide suggests that imidization completes at ~200°C with an endothermic reaction associated with the breaking of the C-OH and N-H bonds as revealed by Fourier transformation infrared spectroscopy (FTIR). Although there is 89.8% weight loss when PI is heated from 20°C to 200°C, outgassing of PI passivation is still observed at higher temperatures. Carbon, nitrogen, and oxygen atoms diffuse into Cu during thermal processing of PI/Cu films. The tetraethyl orthosilicate (TEOS) SiO₂ films are used as the barrier layer between PI and Cu to retard the poisoning of Cu. The effect of TEOS SiO₂ film on electromigration of Cu is investigated.

Keywords: POLYIMIDE; ELECTROMIGRATION; CURING PROCESS; IMIDIZATION

Document Type: Miscellaneous

Publication date: 2002-01-01