Curing of Polyimide and the Effect of the TEOS SiO2 Barrier Layer on the Electromigration of Sputtered Cu with Polyimide Passivation
Authors: Hung, Hanyi; Chiou, Bi-Shiou
Source: Journal of Electronic Materials, Volume 31, Number 1, 1 January 2002 , pp. 82-87(6)
Abstract:The curing process of polyimide and the electromigration of copper films with polyimide (PI) passivation are studied. Thermal analysis of polyimide suggests that imidization completes at ~200°C with an endothermic reaction associated with the breaking of the C-OH and N-H bonds as revealed by Fourier transformation infrared spectroscopy (FTIR). Although there is 89.8% weight loss when PI is heated from 20°C to 200°C, outgassing of PI passivation is still observed at higher temperatures. Carbon, nitrogen, and oxygen atoms diffuse into Cu during thermal processing of PI/Cu films. The tetraethyl orthosilicate (TEOS) SiO2 films are used as the barrier layer between PI and Cu to retard the poisoning of Cu. The effect of TEOS SiO2 film on electromigration of Cu is investigated.
Document Type: Miscellaneous
Publication date: 2002-01-01