Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
Authors: Sopori, Bhushan; Zhang, Yi; Ravindra, N.
Source: Journal of Electronic Materials, Volume 30, Number 12, December 2001 , pp. 1616-1627(12)
Abstract:Hydrogen is an electronically active impurity in Si with some unique properties—it can passivate other impurities and defects, both-at the interface and in the bulk. Controlled introduction of H can lower interface state density, and thereby improve Schottky and MOS devices, and can reduce bulk recombination to increase minority-carrier-controlled device performance. However, excess H can also in troduce defects that can be detrimental to the device properties. Although H is typically introduced by exposing the device to a fluc of atomic species, a suitable device configuration can be passivated by thermal treatment in forming gas. This paper addresses some basic issues of deviee processing in H ambient to improve device performance.
Document Type: Research Article
Publication date: December 1, 2001