Influence of Oxygen in AlGaAs-Based Laser Structures with Al-Free Active Region on Device Properties

Authors: Knauer A.; Wenzel H.; Erbert G.; Sumpf B.; Weyers M.

Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1421-1428(8)

Publisher: Springer

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Abstract:

AlGaAs-based lasers with GaAsP active regions for emission wavelengths near 730 nm and 800 nm were studied. Trimethyl aluminum sources with different levels of oxygen concentration were used for the deposition of the laser structures. The laser data show that the oxygen level in the AlGaAs wave guides is very critical for the performance of the 730 nm devices, even for the use of an Al-free active region, while its influence is weak for the 800 nm devices. Using the TMAl source leading to the lowest O-uptake in the AlGaAs wave guides from such structures, 7 W output power and a degradation rate of 1·10^-5h^-1 at 2 W cw (100 m stripe width × 4 mm, 25°C, 2000 h) are achieved for 730 nm emission.

Keywords: GAASP; ALGAAS; OXYGEN; METALORGANIC VAPOR PHASE EPITAXY; MOVPE; QUANTUM WELLS QW; LASER DIODES

Document Type: Research article

Publication date: 2001-11-01