OMVPE Growth of P-type GaN Using Solution Cp2Mg
Authors: Qi Y.; Musante C.; Lau K.M.; Smith L.; Odedra R.; Kanjolia R.
Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1382-1386(5)
Abstract:Bis(cyclopentadienyl)magnesium(Cp2Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp2Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp2Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 × 1018 /cm3.
Document Type: Research article
Publication date: 2001-11-01