OMVPE Growth of P-type GaN Using Solution Cp₂Mg

Authors: Qi Y.; Musante C.; Lau K.M.; Smith L.; Odedra R.; Kanjolia R.

Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1382-1386(5)

Publisher: Springer

Buy & download fulltext article:

Price: $47.00 plus tax (Refund Policy)

Abstract:

Bis(cyclopentadienyl)magnesium(Cp₂Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp₂Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp₂Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 × 10¹⁸ /cm³.

Keywords: GALLIUM NITRIDE; OMVPE; MAGNESIUM DOPING; SOLUTION CP2MG; SIMS; GDMS

Document Type: Research article

Publication date: 2001-11-01