The influence of high-temperature annealing on SiC schottky diode characteristics

Authors: Zhang, Q.; Sudarshan, T.

Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1466-1470(5)

Publisher: Springer

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The influence of high temperature (up to 800C) annealing on the current-voltage characteristics of n-type 6H-SiC Schottky diodes is presented. Our experimental results indicate that high-temperature annealing can result in the improvement of the forw ard and reverse electrical characteristics of SiC Schottky diodes by repairing any leaky low barrier secondary diode parallel to the primary diode that may be present due to the barrier inhomogeneities at the Schottky contact interface.

Keywords: Annealing; Schottky diodes; SiC; barrier inhomogeneities

Document Type: Research Article


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Publication date: November 1, 2001

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