Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor
Authors: Blattner, A.; Lensch, J.; Wessels, B.
Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1408-1411(4)
Abstract:In1−xMnxAs diluted magnetic semiconductor (DMS) thin films with x 0.14 have been grown using organometallic vapor phase epitaxy. Tricarbonyl-(methylcyclopentadienyl)manganese was successfully used as the Mn source. Single phase, epitaxial films were achieved for compositions as high as x=0.14 using growth temperatures ≥475°C. For lower growth temperatures or x>0.14, nanometer scale MnAs precipitates were observed within the In1−xMnxAs matrix. Transport properties were investigated using the Hall effect. All Mn doped films were p-type with single phase films exhibiting hole concentrations 2≤×1019 cm−3. Magnetization was measured as a function of temperature and applied field for a single phase film with x=0.1. Ferromagnetic ordering was observed at 5 K with a saturation magnetization of Ms=68 emu/cm3, a remnant magnetization, Mr=10 emu/cm3, and a coercive field Hc=400 Oe.
Document Type: Research Article
Publication date: 2001-11-01