Effect of substrate orientation on phase separation in epitaxial GaInAsSb
Authors: Wang, C.; Calawa, D.; Vineis, C.
Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1392-1396(5)
Abstract:The effect of substrate misorientation on phase separation in Ga1−xInxAsySb1−y nominally lattice matched to GaSb is reported. The layers were grown at 575°C by organometallic vapor phase epitaxy on vicinal (001) GaSb substrates, miscut
Document Type: Research Article
Publication date: November 1, 2001