Effect of substrate orientation on phase separation in epitaxial GaInAsSb

Authors: Wang, C.; Calawa, D.; Vineis, C.

Source: Journal of Electronic Materials, Volume 30, Number 11, November 2001 , pp. 1392-1396(5)

Publisher: Springer

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Abstract:

The effect of substrate misorientation on phase separation in Ga1−xInxAsySb1−y nominally lattice matched to GaSb is reported. The layers were grown at 575°C by organometallic vapor phase epitaxy on vicinal (001) GaSb substrates, miscut or (101). Ga1−xInxAsySb1−y (x ~ 0.1, ~ 0.09) layers, which have 300-K photoluminescence (PL) peak emission at ~2.1 m, grow stepbunched and exhibit minimal phase separation. The full width at half maximum of 4-K PL spectra is slightly smaller at 7 meV for layers grown on substrates miscut toward compared to 9 meV for layers grown on substrates miscut toward and (101). Ga1−xInxAsySb1−y layers with higher alloy composition (0.16≤x≤0.19, 0.14≤y≤0.17), which have 300-K PL peak emission at ~2.4 m, have significant phase separation. These layers are characterized by increased lattice constant variations and epitaxial tilt, broad PL spectra with significant band tailing, and strong contrast modulation in transmission electron microscopy. The degree of decomposition depends on substrate miscut direction: Ga1−xInxAsySb1−y layers grown on (001) substrates are more homogeneous than those grown on (001) and (001)2°→(101) substrates. The results are attributed to the smaller adatom diffusion length on substrates miscut toward .

Keywords: GaInAsSb; OMVPE; phase separation; substrate misorientation

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-001-0189-6

Publication date: November 1, 2001

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