Photoluminescent properties of ZnO thin films grown on SiO₂/Si(100) by metal-organic chemical vapor deposition

Authors: Park, W.; Yi, Gyu-Chul

Source: Journal of Electronic Materials, Volume 30, Number 10, October 2001 , pp. L32-L35(4)

Publisher: Springer

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Abstract:

We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO₂/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400°C. From the PL spectra of the films at 10-300 K, strong PL peaks due to free and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the Zn O films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm², a strong, sharp peak was observed at 3.181 eV.

Keywords: ZnO; metal organic chemical vapor deposition (MOCVD); photoluminescence; SiO2/Si substrate; stimulated emission

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-001-0127-7

Affiliations: 1: Email: gcyi@postech.ac.kr

Publication date: 2001-10-01