Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition
Authors: Park, W.; Yi, Gyu-Chul
Source: Journal of Electronic Materials, Volume 30, Number 10, October 2001 , pp. L32-L35(4)
Abstract:We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400°C. From the PL spectra of the films at 10-300 K, strong PL peaks due to free and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the Zn O films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm2, a strong, sharp peak was observed at 3.181 eV.
Document Type: Research article
Publication date: 2001-10-01