Study of Optical and Electrical Properties of AlxGa1-xSb Grown by Metalorganic Chemical Vapor Deposition
Authors: Ramelan, A.H.; Drozdowicz-Tomsia, K.; Goldys, E.M.; Tansley, T.L.
Source: Journal of Electronic Materials, Volume 30, Number 8, 1 August 2001 , pp. 965-971(7)
Abstract:Alx Ga1-xSb films in the regime 0 ≤ x ≤ 0.25 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb precursors. We report growth conditions and film properties, including the effect of V/III ratio and growth temperature on electrical and optical properties. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. All epilayers grown exhibit p-type behavior. The mobility decreases and the carrier concentration increases sharply when a small amount of Al is incorporated into GaSb. The sharp cutoff and Fabry-Perot oscillations of the transmission spectra of the AlGaSb layers confirm the high quality of the films. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.