Defect Reduction in Hg1–xCdxTe Grown by Molecular Beam Epitaxy on Cd0.96Zn0.04Te(211)B

Authors: Aqariden, F.; Shih, H.D.; Turner, A.M.; Liao, P.K.

Source: Journal of Electronic Materials, Volume 30, Number 6, 1 June 2001 , pp. 794-796(3)

Publisher: Springer

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Abstract:

A study on preparation of Cd0.96Zn0.04Te(211)B substrates for growth of Hg1-xCdxTe epitaxial layers by molecular beam epitaxy (MBE) was investigated. The objective was to investigate the impact of starting substrate surface quality on surface defects such as voids and hillocks commonly observed on MBE Hg1-xCdxTe layers. The results of this study indicate that, when the Cd0.96Zn0.04Te(211)B substrates are properly prepared, surface defects on the resulting MBE Hg1-xCdxTe films are reduced to minimum (size ~0.1 m and density ~500/cm2), so that these MBE Hg1-xCdxTe films have surface quality as good as that of liquid phase epitaxial (LPE) Hg1-xCdxTe films currently in production in this laboratory.

Keywords: DEFECT REDUCTION; HGCDTE; MBE

Document Type: Research Article

Publication date: June 1, 2001

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