Composition Control of Long Wavelength MBE HgCdTe Using In-situ Spectroscopic Ellipsometry

Authors: Edwall, Dennis; Phillips, Jamie; Lee, Don; Arias, Jose

Source: Journal of Electronic Materials, Volume 30, Number 6, 1 June 2001 , pp. 643-646(4)

Publisher: Springer

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Abstract:

Improved composition control of Hg1–xCdxTe layers grown by molecular beam epitaxy using in-situ spectroscopic ellipsometry is described. This has increased our composition yields from < 40% to approximately 70% for a specification of x to within 0.0015 of target composition. Knowledge of composition during growth also enables corrections to effusion cell temperatures so that the in-depth composition profile can be controlled. Further improvements were obtained after active composition control was implemented whereby the ellipsometer controls the Te cell temperature to maintain the desired composition.

Keywords: HGCDTE; MBE; SPECTROSCOPIC ELLIPSOMETRY

Document Type: Research Article

Publication date: June 1, 2001

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