Composition Control of Long Wavelength MBE HgCdTe Using In-situ Spectroscopic Ellipsometry

Authors: Edwall, Dennis; Phillips, Jamie; Lee, Don; Arias, Jose

Source: Journal of Electronic Materials, Volume 30, Number 6, 1 June 2001 , pp. 643-646(4)

Publisher: Springer

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Improved composition control of Hg1–xCdxTe layers grown by molecular beam epitaxy using in-situ spectroscopic ellipsometry is described. This has increased our composition yields from < 40% to approximately 70% for a specification of x to within 0.0015 of target composition. Knowledge of composition during growth also enables corrections to effusion cell temperatures so that the in-depth composition profile can be controlled. Further improvements were obtained after active composition control was implemented whereby the ellipsometer controls the Te cell temperature to maintain the desired composition.


Document Type: Research Article

Publication date: June 1, 2001

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