1.3 m GaAs-based quantum well and quantum dot lasers: Comparative analysis
Authors: Egorov, A.; Zhukov, A.; Ustinov, V.
Source: Journal of Electronic Materials, Volume 30, Number 5, May 2001 , pp. 477-481(5)
Abstract:New generation of long-wavelength (1.3 m) GaAs based lasers is discussed. The modal gain, threshold current, quantum efficiency characteristics and temperature stability of lasers based on InGaAsn quantum wells and InAs/InGaAs quantum dots are compared.
Document Type: Research Article
Affiliations: Email: firstname.lastname@example.org
Publication date: May 1, 2001