Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Authors: Ryou, Jae-Hyun; Dupuis, Russell; Reddy, C.; Narayanamurti, Venkatesh; Mathes, David; Hull, Robert; Mintairov, Alexander; Merz, James

Source: Journal of Electronic Materials, Volume 30, Number 5, May 2001 , pp. 471-476(6)

Publisher: Springer

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Abstract:

We report the characteristics of InP self-assembled quantum dots embedded in In_0.5Al_0.5P on GaAs substrates grown by metalorganic chemical vapor deposition. The InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475°C to 600°C with constant growth time. Above the growth temperature of 600°C, however, dramatically smaller and densely distributed self-assembled InP quantum dots are formed. The small InP quantum dots grown at 650°C are dislocation-free “coherent” regions with an average size of ∼20 nm (height) and a density of ∼1.5 × 10⁸ mm⁻². These InP quantum dots have a broad range of luminescence corresponding to red or organge in the visible spectrum.

Keywords: InP; self-assembled quantum dots; islands; metalorganic chemical vapor deposition; atomic force microscopy; photoluminescence; transmission electron microscopy

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-001-0085-0

Publication date: 2001-05-01