A Transmission Electron Microscopy Study of Microstructure Evolution with Increasing Anneal Temperature in Ti/Al Ohmic Contacts to n-GaN
Authors: Bright, A.N.; Tricker, D.M.; Humphreys, C.J.; Davies, R.
Source: Journal of Electronic Materials, Volume 30, Number 3, 1 March 2001 , pp. 283-286(4)
Abstract:Al(200 nm)/Ti(20 nm)/n-GaN contacts have been studied using transmission electron microscopy (TEM) and the resulting microstructures correlated with the observed variation in specific contact resistance (c). A minimum c value of 7 × 10-7 Ωcm2 was obtained after annealing at 550°C for 1 min in argon. Bulk metal and interfacial phases have been characterized, and explanations for the observed electrical behavior are proposed. A transition from TiN to AlN at the interface occurs between 650°C and 700°C.
Document Type: Letter Section
Publication date: March 1, 2001