Etching of Silicon Carbide for Device Fabrication and through Via-Hole Formation
Authors: Khan, F.A.; Roof, B.; Zhou, L.; Adesida, I.
Source: Journal of Electronic Materials, Volume 30, Number 3, 1 March 2001 , pp. 212-219(8)
Abstract:We have investigated the etching of SiC using inductively-coupled-plasma reactive ion etching with SF6-based and Cl2-based gas mixtures. Etch rates have been investigated as functions of bias voltage, ICP coil power, and chamber pressure. It will be shown, for the first time, that SiC surfaces etched in Cl2-based plasmas yield better surface electrical characteristics than those etched in SF6-based plasmas. We have also achieved SiC etch rates in excess of 1m/min which are suitable for micro-machining and via-hole applications. Through via-holes obtained in 140 m thick SiC at an effective etch rate of 824 nm/min have been achieved. To the best of our knowledge, to date, this is the highest effective etch rate for a through via-hole etched with a masking process compatible with microelectronic fabrication.
Document Type: Research Article
Publication date: March 1, 2001