Electrical Properties and Spectra of Deep Centers in GaN p-i-n Rectifier Structures

Authors: Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Zhang, A.P.; Ren, F.; Pearton, S.J.; Chyi, J.I.; Nee, T.E.; Chou, C.C.; Lee, C.M.

Source: Journal of Electronic Materials, Volume 30, Number 3, 1 March 2001 , pp. 147-155(9)

Publisher: Springer

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Abstract:

GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <10¹⁴ cm^-3 to 2-3 × 10¹⁶ cm^-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ~10¹⁶ cm^-3.

Keywords: GAN; P-I-N RECTIFIERS; DEEP CENTERS; C-V MEASUREMENTS; I-V; MEASUREMENTS; DLTS

Document Type: Research article

Publication date: 2001-03-01