Electrical Properties and Spectra of Deep Centers in GaN p-i-n Rectifier Structures
Authors: Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Zhang, A.P.; Ren, F.; Pearton, S.J.; Chyi, J.I.; Nee, T.E.; Chou, C.C.; Lee, C.M.
Source: Journal of Electronic Materials, Volume 30, Number 3, 1 March 2001 , pp. 147-155(9)
Abstract:GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ~1016 cm-3.
Document Type: Research article
Publication date: 2001-03-01