Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture

Authors: Lee, W.; Park, S.; Kang, B.; Reucroft, P.; Lee, J.

Source: Journal of Electronic Materials, Volume 30, Number 2, February 2001 , pp. 84-88(5)

Publisher: Springer

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The deposition characteristics of Ti−Si−N films obtained by using RF reactive sputtering of various targets in N2/Ar gas mixtures have been investigated. The dependence of film growth rate and stoichiometry on both the Ti/Si ratio of the target and the N2 flow rate were found to be due to the different intridation rates of Ti and Si, resulting in, different sputter yields of titanium and silicon nitrides. XPS results showed that an increase in nitrogen content of the Ti−Si−N films leads to the formation of amorphous Si3N4 bonding, which produces an in crease in resistivity. Lowering the Si content in the deposited Ti−Si−N films favors the formation of crystalline TiN, even at low N2 flow rates, and leads to a lower resistivity. A film growth mechanism, expressed in terms of the nitrogen surface coverage on the target, was proposed.

Keywords: Metallization; RF sputtering; XPS; diffusion barrier; titanium nitride

Document Type: Research Article


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Publication date: February 1, 2001

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