Chemical vapor deposition of B₁₂As₂ thin films on 6H-SiC

Authors: Wang, R.; Zubia, D.; O'Neil, T.; Emin, D.; Aselage, T.; Zhang, W.; Hersee, S.

Source: Journal of Electronic Materials, Volume 29, Number 11, November 2000 , pp. 1304-1306(3)

Publisher: Springer

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Abstract:

Icosahedral boron arsenide (B₁₂As₂) thin films were deposited on 6H-SiC substrates by chemical vapor deposition using B₂H₆ and AsH₃ sources. X-ray diffraction analysis of the thin films showed them to have the rhombohedral crystal structure and lattice parameters of B₁₂As₂. Transmission electron microscopy showed that the films were polycrystalline with oriented crystal grains. The preferential orientation of the film with respect to the SiC substrate was determined to be: [0001]_B12_As ₂//[0001]_6H-SiC and [ <EquationSource Format="TEX"><![CDATA[ $$10bar 10$$ ]]></EquationSource> ]_B12_As ₂//[ <EquationSource Format="TEX"><![CDATA[ $$10bar 10$$ ]]></EquationSource> ]_6H-SiC to within 3°. Electron diffraction also revealed the extremely small lattice mismatch (<0.5%) between the B₁₂As₂ basal-plane lattice parameter and twice the SiC basal-plane lattice parameter.

Keywords: B12As2; thin films; CVD; 6H-SiC; substrates

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-000-0129-x

Publication date: 2000-11-01