Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties
Authors: Ressel, P.; Hao, P.; Park, M.; Yang, Z.; Wang, L.; Österle, W.; Kurpas, P.; Richter, E.; Kuphal, E.; Hartnagel, H.
Source: Journal of Electronic Materials, Volume 29, Number 7, July 2000 , pp. 964-972(9)
Abstract:The development of two metallizations based on the solid-phase regrowth principle is presented, namely Pd/Sb(Zn) and Pd/Ge(Zn) on moderately doped In0.53Ga0.47As (p=4×1018 cm−3). Contact resistivities of 2–3×10−7 and 6–7×10−7 Ωcm2, respectively, have been achieved, where both systems exhibit an effective contact reaction depth of zero and a Zn diffusion depth below 50 nm. Exhibiting resistivities equivalent to the lowest values of Au-based systems in this doping range, especially Pd/Sb(Zn) contacts are superior to them concerning metallurgical stability and contact penetration. Both metallizations have been successfully applied for contacting the base layer of InP/In0.53Ga0.47As heterojunction bipolar transistors.
Document Type: Research Article
Publication date: 2000-07-01